GaAs具有很高的電子遷移率，故可用于制備高速或微波半導體器件。砷化鎵還用于制作耐高溫、抗輻照或低噪聲器件，以及近紅外發光和激光器件，也用于作光電陰極材料等，以成為超高速半導體集成電路的基礎材料。 GaAs has high electron mobility and can be used to fabricate high speed or microwave semiconductor devices.Gallium arsenide is also used to make high temperature, radiation resistance or low noise devices, as well as near infrared luminescence and laser devices, as well as photocathode materials, etc., in order to become the basis of ultra-high-speed semiconductor integrated circuits.